unisonic technologies co., ltd mcr101 scr www.unisonic.com.tw 1 of 5 copyright ? 2010 unisonic technologies co., ltd qw-r301-009,d sensitive gate silicon controlled rectifiers reverse blocking thyristors ? description pnpn devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thrusters, and sensing and detection circuits. supplied in an inexpensive plastic to-92 package which is readily adaptable for use in automatic insertion equipment. ? features *sensitive gate allows triggeri ng by micro controllers and other logic circuits *blocking voltage to 600v *on-state current rating of 0.8a rms at 80 c *high surge current capability ? 10a *minimum and maximum values of igt, vgt and ih specified for ease of design *immunity to dv/dt ? 20v/ sec minimum at 110 c *glass-passivated surface for reliability and uniformity ? ordering information ordering number pin assignment normal lead free plating halogen free package 1 2 3 packing mcr101-x-xx-t92-b mcr101l-x-xx-t92-b mcr101g-x-xx-t92-b to-92 g a k tape box mcr101-x-xx-t92-k mcr101l-x-xx-t92-k MCR101G-X-XX-T92-K to-92 g a k bulk note: pin assignment: g: gate a: anode k: cathode mcr101l-x-xx-t92-b (1)packing type (2)package type (3)rank (4)peak voltage (1) b: tape reel, k: bulk (2) t92: to-92 (3) xx: refer to cl assification of i gt (4) 4: 200v, 6: 400v, 8: 600v (5)lead plating (5) l: lead free plating, blank: pb/sn (5) g: halogen free
mcr101 scr unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r301-009,c ? absolute maximum ratings parameter symbol ratings unit mcr101-4 200 mcr101-6 400 peak repetitive off- state voltage(note) (t j =-40 to 110 c, sine wave, 50 to 60hz; gate open) mcr101-8 v drm ,v rrm 600 v on-sate rms current (tc=80 c) 180 condition angles i t(rms) 0.8 a peak non-repetitive surge current (1/2 cycle, sine wave, 60hz, t j =25 c) i tsm 10 a circuit fusing considerations (t=8.3 ms) i 2 t 0.415 a 2 s forward peak gate power (t a =25 c, pulse width 1.0 s) p gm 0.1 w forward average gate power (t a =25 c, t=8.3ms) p g(av) 0.1 w peak gate current ? forward (t a =25 c, pulse width 1.0 s) i gm 1 a peak gate voltage ? reverse (t a =25 c, pulse width 1.0 s) v grm 5 v operating junction te mperature @ rated v rrm and v drm t j -40 ~ +110 c storage temperature t stg -40 ~ +150 c note: v drm and v rrm for all types can be applied on a continuous bas is. ratings apply for zero or negative gate voltage; however, positive gate volt age shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ? thermal data parameter symbol rating unit junction to ambient ja 200 c/w junction to case jc 75 c/w ? electrical characteristics (t j =25 c, unless otherwise stated) parameter symbol test conditions min typ max unit off characteristics tc=25 c 10 peak forward or reverse blocking current tc=125 c i drm , i rrm v d =rated v drm and v rrm ; r gk =1k 100 a on characteristics peak forward on-state voltage (note1) v tm i tm =1a peak @ t a =25 c 1.7 v gate trigger current (continuous dc)(note2) i gt v ak =7vdc, r l =100 , t c =25 c 40 200 a tc=25 c 0.5 5 holding current (note 3) tc=-40 c i h v ak =7vdc, initiating current=20ma 10 ma tc=25 c 0.6 10 latch current tc=-40 c i l v ak =7v, ig=200 a 15 ma tc=25 c 0.62 0.8 gate trigger current (continuous dc) (note 2) tc=-40 c v gt v ak =7vdc, r l =100 1.2 v dynamic characteristics critical rate of rise of off-state voltage dv/dt v d =rated v drm , exponential waveform, r gk =1000 , t j =110 c 20 35 v/ s critical rate of rise of on-state current di/dt i pk =20a , pw=10 sec dig/dt=1a/ sec, igt=20ma 50 a/ s notes: 1. indicates pulse test width 1.0ms, duty cycle 1% 2. r gk =1000 included in measurement. 3. does not include r gk in measurement.
mcr101 scr unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r301-009,c ? voltage current characteristic of scr symbol parameter v drm peak repetitive off st at forward voltage i drm peak forward blocking current v rrm peak repetitive off st ate reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current on state i rrm at v rrm i h v tm + current reverse blocking region (off state) reverse avalanche region anode - forward blocking region (off state) i drm at v drm + voltage anode + ? classification of i gt rank b c aa ab ac ad range 48~105 a 95~200 a8~16 a 14~21 a 19~25 a 23~52 a
mcr101 scr unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r301-009,c ? typical characteristics junction temperature, t j ( ) gate trigger current ( a) 100 -25 70 40 20 50 90 -10 5 25 50 65 95 110 10 30 60 80 80 20 -40 figure 1. typical gate trigger current versus junction temperature junction temperature, t j ( ) gate trigger voltage (volts) 1.0 -25 0.7 0.5 0.3 0.9 -10 5 25 50 65 95 110 0.2 0.4 0.6 0.8 80 20 -40 figure 2. typical gate trigger voltage versus junction temperature holding current ( a) latching current ( a) maximum allowable case temperature, t c ( ) instantaneous on-state current, i t (amps)
mcr101 scr unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r301-009,c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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